Observation of mobility enhancement in ultrathin SOI MOSFETs

被引：0
|
作者：
Yoshimi, M. [1 ]
Hazama, H. [1 ]
Takahashi, M. [1 ]
Kambayashi, S. [1 ]
Tango, H. [1 ]
机构：
[1] Toshiba Corp, Japan
来源：
Electronics Letters | 1988年 / 24卷 / 17期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Semiconductor Devices, MOSFET
引用
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页码：1078 / 1079
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