Boron-induced electronic states in hydrogenated amorphous silicon

被引：0
|
作者：
Lin, Shu-Ya [1 ]
机构：
[1] Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan
来源：
Thin Solid Films | 1999年 / 343卷
关键词：
Number:; -; Acronym:; NSC; Sponsor: National Science Council;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：285 / 287
相关论文
共 50 条
  • [21] LOCALIZED STATES AND THE ELECTRONIC-PROPERTIES OF A HYDROGENATED DEFECT IN AMORPHOUS-SILICON
    DIVINCENZO, DP
    BERNHOLC, J
    BRODSKY, MH
    PHYSICAL REVIEW B, 1983, 28 (06): : 3246 - 3257
  • [22] FLUCTUATION-INDUCED GAP STATES IN AMORPHOUS HYDROGENATED SILICON.
    Chakraverty, B.K.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1986, 53 (02): : 147 - 157
  • [23] Electronic properties of ultrathin hydrogenated amorphous silicon
    Nunomura, Shota
    Sakata, Isao
    Matsubara, Koji
    APPLIED PHYSICS EXPRESS, 2017, 10 (08)
  • [24] Electrical Activity of Boron and Phosphorus in Hydrogenated Amorphous Silicon
    Pandey, A.
    Cai, B.
    Podraza, N.
    Drabold, D. A.
    PHYSICAL REVIEW APPLIED, 2014, 2 (05):
  • [25] ELECTRONIC TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON
    OVERHOF, H
    BEYER, W
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (04): : 377 - 392
  • [26] Electronic states in hydrogenated microcrystalline silicon
    Finger, F
    Muller, J
    Malten, C
    Wagner, H
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1998, 77 (03): : 805 - 830
  • [27] BORON-INDUCED MICROSTRAINS IN DISLOCATION-FREE SILICON CRYSTALS
    SCHWUTTKE, GH
    JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1662 - &
  • [28] Electronic states and the light-induced metastability in hydrogenated amorphous silicon prepared by hot-wire CVD
    Han, DX
    Yue, GZ
    Habuchi, H
    Iwaniczko, E
    Wang, Q
    THIN SOLID FILMS, 2001, 395 (1-2) : 134 - 137
  • [29] DENSITY OF STATES IN HYDROGENATED AMORPHOUS-SILICON
    GOLIKOVA, OA
    KAZANIN, MM
    MEZDROGINA, MM
    SOROKINA, KL
    FEOKTISTOV, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (10): : 1199 - 1200
  • [30] Kinetics of metastable states in hydrogenated amorphous silicon
    Jackson, Warren, 1600, (114):
12345