共 50 条
- [22] EFFECT OF MELT STOICHIOMETRY ON ELECTRICAL ACTIVATION UNIFORMITY OF SI-IMPLANTED LAYERS IN UNDOPED SEMI-INSULATING GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07): : L488 - L490
- [23] RADIATION ANNEALING OF SI-IMPLANTED AND S-IMPLANTED GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (05): : L299 - L300
- [26] ELECTRICAL-PROPERTIES OF P-TYPE LAYER IN SI-IMPLANTED GAAS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (01): : K83 - K86
- [28] Simulation of electrical properties in ion implanted GaAs. PROCEEDINGS OF THE JMSM 2008 CONFERENCE, 2009, 2 (03): : 797 - 801
- [29] DEGRADATION OF ACTIVATION ON SI-IMPLANTED GAAS CRYSTAL WAFERS BY MECHANICAL SURFACE DAMAGES JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (11): : L1957 - L1958
- [30] Effects of Thermal Annealing on the Electrical Properties of Si-implanted Large Diameter SI-GaAs PROCEEDINGS OF 2ND INTERNATIONAL SYMPOSIUM ON PHYSICS AND HIGH-TECH INDUSTRY, 4TH INTERNATIONAL SYMPOSIUM ON MAGNETIC INDUSTRY, 1ST SHENYANG FORUM FOR DEVELOPMENT AND COOPERATION OF HIGH-TECH INDUSTRY IN NORTHEAST ASIA, 2009, : 247 - 248