Reduction of charging damage of gate oxide by time modulation bias method

被引：0

作者：

Ono, Tetsuo ^{[1
]}

Oomoto, Yutaka ^{[1
]}

Mizutani, Tatsumi ^{[1
]}

Yoshioka, Ken ^{[1
]}

Ogawa, Yoshibumi ^{[1
]}

Kofuji, Naoyuki ^{[1
]}

Izawa, Masaru ^{[1
]}

Goto, Yasuo ^{[1
]}

Kure, Tokuo ^{[1
]}

机构：

[1] Hitachi, Ltd, Yamaguchi, Japan

来源：

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings | 1999年

关键词：

D O I：

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中图分类号：

学科分类号：

摘要：

引用

页码：167 / 170

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