Reduction of charging damage of gate oxide by time modulation bias method

被引：0
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作者：
Ono, Tetsuo [1 ]
Oomoto, Yutaka [1 ]
Mizutani, Tatsumi [1 ]
Yoshioka, Ken [1 ]
Ogawa, Yoshibumi [1 ]
Kofuji, Naoyuki [1 ]
Izawa, Masaru [1 ]
Goto, Yasuo [1 ]
Kure, Tokuo [1 ]
机构：
[1] Hitachi, Ltd, Yamaguchi, Japan
来源：
International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings | 1999年
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页码：167 / 170
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