LOW NOISE AND HIGH POWER GaAs MESFETs.

被引：0
|
作者：
Nakatani, Masaaki
Ohtsubo, Mutsuyuki
Ishii, Takashi
机构：
来源：
Denshi Tokyo/Electron Tokyo | 1979年 / 18期
关键词：
Compendex;
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学科分类号：
摘要：
TRANSISTORS, FIELD EFFECT
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页码：114 / 117
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