Minority-carrier lifetime in heavily doped GaAs:C

被引：0

作者：

机构：

[1] Strauss, U.

[2] Heberle, A.P.

[3] Zhou, X.Q.

[4] Ruehle, W.W.

[5] Lauterbach, T.

[6] Bachem, K.H.

[7] Haegel, N.M.

来源：

Strauss, U. | 1600年 / 32期

关键词：

Semiconducting gallium arsenide;

D O I：

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学科分类号：

摘要：

引用

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