Minority-carrier lifetime in heavily doped GaAs:C

被引：0
|
作者：
机构：
[1] Strauss, U.
[2] Heberle, A.P.
[3] Zhou, X.Q.
[4] Ruehle, W.W.
[5] Lauterbach, T.
[6] Bachem, K.H.
[7] Haegel, N.M.
来源：
Strauss, U. | 1600年 / 32期
关键词：
Semiconducting gallium arsenide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] MINORITY-CARRIER LIFETIME IN HEAVILY DOPED GAAS-C
    STRAUSS, U
    HEBERLE, AP
    ZHOU, XQ
    RUHLE, WW
    LAUTERBACH, T
    BACHEM, KH
    HAEGEL, NM
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1B): : 495 - 497
  • [2] Minority-carrier kinetics in heavily doped GaAs:C studied by transient photoluminescence
    Maassdorf, A
    Gramlich, S
    Richter, E
    Brunner, F
    Weyers, M
    Tränkle, G
    Tomm, JW
    Mazur, YI
    Nickel, D
    Malyarchuk, V
    Günther, T
    Lienau, C
    Bärwolff, A
    Elsaesser, T
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (08) : 5072 - 5078
  • [3] Minority-carrier kinetics in heavily doped GaAs:C studied by transient photoluminescence
    Maaßdorf, A., 1600, American Institute of Physics Inc. (91):
  • [4] A NEW MINORITY-CARRIER LIFETIME MODEL FOR HEAVILY DOPED GAAS AND INGAASP TO OBTAIN ANALYTICAL SOLUTIONS
    SELVAKUMAR, CR
    SOLID-STATE ELECTRONICS, 1987, 30 (07) : 773 - 774
  • [5] MINORITY-CARRIER LIFETIME MEASUREMENT IN GAAS
    PENCE, IW
    GREILING, PT
    PROCEEDINGS OF THE IEEE, 1974, 62 (07) : 1030 - 1031
  • [6] MINORITY-CARRIER LIFETIME OF GAAS ON SILICON
    AHRENKIEL, RK
    ALJASSIM, MM
    KEYES, B
    DUNLAVY, D
    JONES, KM
    VERNON, SM
    DIXON, TM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (03) : 996 - 1000
  • [7] MINORITY-CARRIER LIFETIME OF GAAS ON SILICON
    AHRENKIEL, RK
    ALJASSIM, MM
    DUNLAVY, DJ
    JONES, KM
    VERNON, SM
    TOBIN, SP
    HAVEN, VE
    CONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 684 - 688
  • [8] MINORITY-CARRIER INJECTION INTO HEAVILY DOPED SILICON
    SLOTBOOM, JW
    SOLID-STATE ELECTRONICS, 1977, 20 (02) : 167 - 170
  • [9] The impact of defects to minority-carrier dynamics in heavily doped GaAs:C analyzed by transient photoluminescence spectroscopy
    Tomm, JW
    Maassdorf, A
    Mazur, YI
    Gramlich, S
    Richter, E
    Brunner, F
    Weyers, M
    Tränkle, G
    Malyarchuk, V
    Günther, T
    Lienau, C
    Jurisch, M
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 25 - 28
  • [10] MINORITY-CARRIER RECOMBINATION IN HEAVILY-DOPED SILICON
    TYAGI, MS
    VANOVERSTRAETEN, R
    SOLID-STATE ELECTRONICS, 1983, 26 (06) : 577 - 597
12345