Contamination of BF2+ beam and the effects on implantation junction depth

被引：0

作者：

Li, Jinhua ^{[1
]}

Zou, Shichang ^{[1
]}

机构：

[1] Shanghai Inst of Metallurgy, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1990年 / 11卷 / 04期

关键词：

Integrated Circuit Manufacture - Ion Beams - Semiconductor Devices--Junctions;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The BF2+ beam can be contaminated by BF+, F+ and B+ beams with different energies due to the collisions between BF2+ and the remaining gas molecules in the system. It is unfavourable for shallow junction formation because the junction depth would be increased remarkably as shown by SIMS results. Three methods of removing or decreasing the contamination beams are presented.

引用

页码：294 / 300