Refractive index model for Ga1-xAlxAs

被引：0
|
作者：
Kong, Jun
Zhang, Weijun
Yang, Zhilian
机构：
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1999年 / 20卷 / 09期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
5
引用
收藏
页码：748 / 752
相关论文
共 50 条
  • [11] WAVELENGTH MODULATION SPECTROSCOPY OF GA1-XALXAS
    LANDE, R
    MADELON, R
    HAIRIE, A
    FORTINI, A
    REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (03): : 483 - 485
  • [12] LIQUID PHASE EPITAXY OF GA1-XALXAS
    ANDRE, E
    MAHIEU, M
    LEDUC, JM
    JOURNAL OF CRYSTAL GROWTH, 1971, 13 (MAY) : 663 - &
  • [13] IMPURITY COMPENSATION IN GA1-XALXAS ALLOYS
    SAXENA, AK
    SINGH, BB
    PHYSICAL REVIEW B, 1983, 28 (02): : 1132 - 1133
  • [14] DX CENTER IN GA1-XALXAS ALLOYS
    BOURGOIN, JC
    FENG, SL
    VONBARDELEBEN, HJ
    PHYSICAL REVIEW B, 1989, 40 (11): : 7663 - 7670
  • [15] A STUDY OF ALLOY SCATTERING IN GA1-XALXAS
    CHANDRA, A
    EASTMAN, LF
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2669 - 2677
  • [16] Nonlinear optical absorption and refractive index change in realistic GaAs/Ga1-xAlxAs V-groove quantum wires
    Giraldo-Tobon, Eugenio
    Palacio, J. L.
    Fulla, M. R.
    Ospina, Walter
    Miranda, Guillermo L.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 148
  • [17] LEAKY TUBE ZINC DIFFUSION IN GA1-XALXAS
    AGENO, SK
    ROEDEL, RJ
    MELLEN, N
    ESCHER, JS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : C403 - C404
  • [18] ELECTRON-MOBILITY IN GA1-XALXAS ALLOYS
    SAXENA, AK
    PHYSICAL REVIEW B, 1981, 24 (06): : 3295 - 3302
  • [19] MULTIBARRIER TUNNELING IN GA1-XALXAS/GAAS HETEROSTRUCTURES
    VASSELL, MO
    LEE, J
    LOCKWOOD, HF
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5206 - 5213
  • [20] TE AND GE DOPING STUDIES IN GA1-XALXAS
    SPRINGTH.AJ
    KING, FD
    JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) : 862 - 862
12345