Local order and H-bonding in N-rich amorphous silicon nitride

被引：6

作者：

Senemaud, C. ^{[1
]}

Gheorghiu, A. ^{[1
]}

Amoura, L. ^{[1
]}

Etemadi, R. ^{[1
]}

Shirai, H. ^{[1
]}

Godet, C. ^{[1
]}

Fang, M. ^{[1
]}

Gujrathi, S. ^{[1
]}

机构：

[1] CNRS, Paris, France

来源：

Journal of Non-Crystalline Solids | 1993年 / 164-66卷 / pt 2期

关键词：

Chemical vapor deposition - Lattice vibrations - Silicon nitride - Solid state physics;

D O I：

10.1016/0022-3093(93)91184-5

中图分类号：

学科分类号：

摘要：

The local order in Plasma-Enhanced Chemical Vapor Deposition (PECVD) N-rich a-SiNx:H films is shown to depend strongly on the H bonding configuration. The Si-H bonding affects the Si-N lattice vibration, giving a shoulder at 1020 cm-1, and shifts the Si3p - N2p peak position in the valence band distribution towards lower binding energies.

引用

页码：1073 / 1076