IMPURITY BANDS IN SILICON AND GERMANIUM.

被引：0

作者：

Mott, Nevill ^{[1
]}

机构：

[1] Cavendish Lab, Cambridge, Engl, Cavendish Lab, Cambridge, Engl

来源：

| 1987年

关键词：

D O I：

10.1007/978-1-4613-1841-5_2

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[41] IMPURITY EFFECTS IN AMORPHOUS-GERMANIUM AND SILICON
ALZAMIR, J
COLLVER, MM
SOLID STATE COMMUNICATIONS, 1979, 30 (07) : 425 - 428
[42] IMPURITY SCATTERING OF WARM HOLES IN GERMANIUM AND SILICON
TSCHULENA, GR
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (06) : 1219 - +
[43] IMPURITY CONDUCTION IN DUFFUSED GERMANIUM AND SILICON LAYERS
BLAKEMORE, JS
OLSON, RO
HERDER, TH
SOLID-STATE ELECTRONICS, 1966, 9 (07) : 673 - +
[44] SHALLOW IMPURITY SURFACE STATES IN SILICON AND GERMANIUM
SCHECHTER, D
ROMERO, HV
BELL, RJ
SURFACE SCIENCE, 1968, 11 (02) : 352 - +
[45] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON
TRUMBORE, FA
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01): : 205 - 233
[46] COALESCENCE IN INSULAR FILMS OF GERMANIUM.
Mulyar, V.I.
Semiletov, S.A.
Tikhonova, A.A.
Bulletin of the Academy of Sciences of the U.S.S.R. Physical series, 1981, 47 (06): : 175 - 179
[47] Some observations on the spectra of germanium.
van den Bosch, JC
Klinkenberg, PFA
PROCEEDINGS OF THE KONINKLIJKE NEDERLANDSE AKADEMIE VAN WETENSCHAPPEN, 1941, 44 (1/5): : 556 - 562
[48] MECHANISM OF THE PRECIPITATION OF LITHIUM IN GERMANIUM.
Smirnov, G.A.
Tkachev, V.D.
Urenev, V.I.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 7 (12): : 1556 - 1557
[49] BEHAVIOR OF MAGNESIUM IMPURITIES IN GERMANIUM.
Bannaya, V.F.
Voronkova, G.I.
Milenin, E.S.
Petrova, E.A.
Sidorenko, P.V.
Soviet physics. Semiconductors, 1979, 13 (07): : 754 - 756
[50] MIXING ENTHALPY OF CALCIUM AND GERMANIUM.
Nikolaenko, I.V.
Batalin, G.I.
Beloborodova, E.A.
Turchanin, M.A.
Russian metallurgy. Metally, 1987, (02) : 40 - 41

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