IMPURITY BANDS IN SILICON AND GERMANIUM.

被引：0

作者：

Mott, Nevill ^{[1
]}

机构：

[1] Cavendish Lab, Cambridge, Engl, Cavendish Lab, Cambridge, Engl

来源：

| 1987年

关键词：

D O I：

10.1007/978-1-4613-1841-5_2

中图分类号：

学科分类号：

摘要：

引用

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Morgan, GT
Drew, HDK
JOURNAL OF THE CHEMICAL SOCIETY, 1925, 127 : 1760 - 1768
[22] ANOMALOUS ROOM-TEMPERATURE IMPURITY PHOTOCONDUCTIVITY OF MERCURY-DOPED GERMANIUM.
Godik, E.E.
Kuznetsov, A.I.
Lazarev, V.V.
Sinis, V.P.
1977, 11 (08): : 861 - 863
[23] Germanium. XXIX. Germanium monohydride
Dennis, LM
Skow, NA
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1930, 52 : 2369 - 2372
[24] Germanium. X. The determination of germanium
Johnson, EB
Dennis, LM
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1925, 47 : 790 - 793
[25] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON
CONWELL, EM
PHYSICAL REVIEW, 1955, 98 (04): : 1178 - 1178
[26] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM
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SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 : 257 - 320
[27] MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON
FULLER, CS
SEVERIENS, JC
PHYSICAL REVIEW, 1954, 96 (01): : 21 - 24
[28] Atomic weight of germanium.
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JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1921, 43 : 1085 - 1095
[29] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON
CONWELL, EM
PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60
[30] MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON
SEVERIENS, JC
FULLER, CS
PHYSICAL REVIEW, 1953, 92 (05): : 1322 - 1323