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- [6] The effect of rare-earth impurity on the photodarkening relaxation in as-evaporated amorphous As2Se3:Pr and As2Se3:Dy films JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2002, 4 (04): : 857 - 861
- [8] Temperature Dependence of the Photoluminescence Intensity in Si3+xN4:H Films with Amorphous Si Nanoclusters: Evidence for Two Processes Involved in the Nonradiative Relaxation of Photoexcitations 1ST INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR AND PLASMONICS - ACTIVE NANOSTRUCTURES FOR PHOTONIC DEVICES AND SYSTEMS, 2009, 25 (11): : 35 - 42