Mixing of interface dipole and band bending at organic/metal interfaces in the case of exponentially distributed transport states

被引：0
|
作者：
机构：
[1] Paasch, G.
[2] Peisert, H.
[3] Knupfer, M.
[4] Fink, J.
[5] Scheinert, S.
来源：
Paasch, G. (g.paasch@ifw-dresden.de) | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 14 条
  • [1] Mixing of interface dipole and band bending at organic/metal interfaces in the case of exponentially distributed transport states
    Paasch, G
    Peisert, H
    Knupfer, M
    Fink, J
    Scheinert, S
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) : 6084 - 6089
  • [2] Interface dipole at metal-organic interfaces: Contribution of metal induced interface states
    Lee, C. S.
    Tang, J. X.
    Zhou, Y. C.
    Lee, S. T.
    APPLIED PHYSICS LETTERS, 2009, 94 (11)
  • [3] Characterization of the interface dipole at organic/metal interfaces
    Crispin, X
    Geskin, V
    Crispin, A
    Cornil, J
    Lazzaroni, R
    Salaneck, WR
    Brédas, JL
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2002, 124 (27) : 8131 - 8141
  • [4] Interface dipole at organic/metal interfaces and organic solar cells
    Crispin, X
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2004, 83 (2-3) : 147 - 168
  • [5] Transport band gap opening at metal-organic interfaces
    Haidu, Francisc
    Salvan, Georgeta
    Zahn, Dietrich R. T.
    Smykalla, Lars
    Hietschold, Michael
    Knupfer, Martin
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 32 (04):
  • [6] Metal-Diffusion-Induced Interface Dipole: Correlating Metal Oxide-Organic Chemical Interaction and Interface Electronic States
    Hong, Kihyon
    Kim, Kisoo
    Kim, Sungjun
    Kim, Soo Young
    Lee, Jong-Lam
    JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (46): : 23107 - 23112
  • [7] Kelvin probe study of band bending at organic semiconductor/metal interfaces: examination of Fermi level alignment
    Ishii, H
    Hayashi, N
    Ito, E
    Washizu, Y
    Sugi, K
    Kimura, Y
    Niwano, M
    Ouchi, Y
    Seki, K
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (06): : 1075 - 1094
  • [8] Distinguishing between interface dipoles and band bending at metal/tris-(8-hydroxyquinoline) aluminum interfaces
    Hill, IG
    Mäkinen, AJ
    Kafafi, ZH
    APPLIED PHYSICS LETTERS, 2000, 77 (12) : 1825 - 1827
  • [9] Determination of interface dipole and band bending at the Ag/tris (8-hydroxyquinolinato) gallium organic Schottky contact by ultraviolet photoemission spectroscopy
    Schlaf, R
    Schroeder, PG
    Nelson, MW
    Parkinson, BA
    Merritt, CD
    Crisafulli, LA
    Murata, H
    Kafafi, ZH
    SURFACE SCIENCE, 2000, 450 (1-2) : 142 - 152
  • [10] Combining the Physics of Metal/Oxide Heterostructure, Interface Dipole, Band Bending, Crystallography, and Surface State to Understand Heterogeneity Contrast in Oxidation and Corrosion
    Yu, Xiao-xiang
    Marks, Laurence D.
    CORROSION, 2019, 75 (02) : 152 - 166
12