DEVELOPMENT OF HIGH POWER GUNN DIODES.

被引：0

作者：

Chandra, Ishwar

Purohit, R.K.

Gulati, R.

Jain, B.P.

Chand, Kishore

机构：

来源：

Indian Journal of Pure and Applied Physics | 1979年 / 17卷 / 11期

关键词：

714 Electronic Components and Tubes;

D O I：

暂无

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学科分类号：

摘要：

The technology developed for the growth of high purity gaAs epitaxial layers and for fabrication of X-band Gunn diodes is described. The problems encountered and the characterization necessary for trouble shooting in the growth of epitaxial layers and device fabrication are discussed. The typical characteristics of Gunn diodes fabricated are also presented.

引用

页码：738 / 741