Threshold current density of GaAs/AlGaAs single-quantum-well lasers grown by molecular beam epitaxy

被引:0
|
作者
机构
[1] Miyazawa, Sei-ichi
[2] Sekiguchi, Yoshinobu
[3] Mizutani, Natsuhiko
来源
Miyazawa, Sei-ichi | 1600年 / 30期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] THRESHOLD CURRENT-DENSITY OF GAAS/ALGAAS SINGLE-QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    MIYAZAWA, S
    SEKIGUCHI, Y
    MIZUTANI, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (11B): : L1935 - L1937
  • [2] Highly strained InGaAs/GaAs single-Quantum-Well lasers grown by molecular beam epitaxy
    Pan, Zhong
    Li, Lian-He
    Xu, Ying-Qiang
    Du, Yun
    Lin, Yao-Wang
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2001, 22 (09): : 1097 - 1101
  • [3] GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy
    Zhang, DH
    Li, CY
    Yoon, SF
    Raman, A
    ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 1996, : 180 - 184
  • [4] Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy
    Li, W
    Jouhti, T
    Peng, CS
    Konttinen, J
    Laukkanen, P
    Pavelescu, EM
    Dumitrescu, M
    Pessa, M
    APPLIED PHYSICS LETTERS, 2001, 79 (21) : 3386 - 3388
  • [5] VERY LOW THRESHOLD CURRENT DENSITIES (UNDER 100 A/CM2) IN ALGAAS/GAAS SINGLE-QUANTUM-WELL GRINSCH LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    CHEN, HZ
    GHAFFARI, A
    MORKOC, H
    YARIV, A
    ELECTRONICS LETTERS, 1987, 23 (25) : 1334 - 1335
  • [6] High performance 1.32 μm GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy
    Li, W
    Peng, CS
    Jouhti, T
    Konttinen, J
    Pavelescu, EM
    Suominen, M
    Dumitrescu, M
    Pessa, M
    NOVEL IN-PLANE SEMICONDUCTOR LASERS, 2002, 4651 : 101 - 106
  • [7] Low-threshold 1.3-μm InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy
    Yang, X
    Heroux, JB
    Jurkovic, MJ
    Wang, WI
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (02) : 128 - 130
  • [8] Extremely low threshold current density strained InGaAs/AlGaAs quantum well lasers by molecular beam epitaxy
    Yang, Guowen, 1600, China Int Book Trading Corp, Beijing, China (15):
  • [9] Extremely low threshold current density strained InGaAs/AlGaAs quantum well lasers by molecular beam epitaxy
    Yang Guowen
    Xu Junying
    Xiao Jianwei
    Xu Zuntu
    Zhang Jingming
    Zheng Wanhua
    Zeng Yiping and Chen Lianghui(Institute of Semiconductors
    半导体学报, 1994, (08) : 565 - 568
  • [10] VERY LOW THRESHOLD CURRENT RIDGE-WAVEGUIDE ALGAAS GAAS SINGLE-QUANTUM-WELL LASERS
    WADA, O
    SANADA, T
    KUNO, M
    FUJII, T
    ELECTRONICS LETTERS, 1985, 21 (22) : 1025 - 1026