InGaAs/InP PIN PHOTODIODE.

被引：0

作者：

Terauchi, Hitoshi

Yamaguchi, Akira

Yamabayashi, Naoyuki

Nishizawa, Hideaki

Kuhara, Yoshiki

Kuroda, Masataka

Iguchi, Shin-ichi

机构：

来源：

Sumitomo Electric Technical Review | 1986年 / 25期

关键词：

SEMICONDUCTOR DIODES; PHOTODIODE;

D O I：

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学科分类号：

摘要：

The InGaAs/InP PIN-Photodiodes were developed for application in long-wavelength optical communications. The photosensitive layer is made of high-purity InGaAs grown by the LPE method. The p-n junction with 100 mu m diameter is formed by a selective area diffusion of zinc. The activation energy for an average lifetime has been obtained as 0. 85 ev from life tests utilizing three different temperature conditions. Using the above parameter, we estimate that the average lifetime of the present photodiodes is 10**7 hours at room temperature.

引用

页码：89 / 96