ON THE TEMPERATURE DEPENDENCE OF THE 1/F NOISE HOOGE PARAMETER alpha H IN N-CHANNEL SILICON JFETS.

被引：0

作者：

Podor, Balint ^{[1
]}

机构：

[1] Hungarian Acad of Sciences, Budapest, Hung, Hungarian Acad of Sciences, Budapest, Hung

来源：

Electron device letters | 1986年 / EDL-7卷 / 11期

关键词：

ELECTROMAGNETIC WAVES - Scattering - TRANSISTORS; FIELD EFFECT - Junctions;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

It is suggested that the temperature dependence of the empirical Hooge noise parameter alpha //H deduced from recent noise measurements on n-channel Si-JFETs can be described as alpha //H varies directly as exp(-T//0 /T) where T//0 equals 510 plus or minus 130 K. The characteristic exponent might be correlated with the energy of the low-wavenumber phonons dominating the mobility through intervalley scattering.

引用

页码：610 / 611