Controlled photon emission in porous silicon microcavities

This study has demonstrated that porous silicon (p-Si)-based microcavities can be successfully realized by electrochemical etching process. Owing to the cavity-induced modifications of the photon density-of-states, these structures show a dramatic narrowing and enhancement of the p-Si emission line together with a highly concentrated radiation pattern. These results demonstrate the very high potential of p-Si microcavities for optoelectronic applications, especially in connection with nonlinear devices and LED.