Inertial properties of n-p-i-p avalanche photodiodes

被引：0
|
作者：
Trishenkov, M.A.
Khakuashev, P.Ye.
Zaben'Kin, O.N.
机构：
来源：
Soviet journal of communications technology & electronics | 1989年 / 34卷 / 08期
关键词：
Diode Bias - Monochromatic Radiation - Silicon Avalanche Photodiodes - Transient Response;
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页码：74 / 81
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