Impurity binding energies in heterostructures two-band model

A transfer-matrix treatment is presented for a one-dimensional semiconductor heterostructure to discuss its electronic density of states. A two band formalism is considered with a direct gap between the valence and conduction bands. The system is described by a tight-binding Hamiltonian, with interactions between first neighbors. Using numerical dta of AlxGa1-xAs-GaAs some interesting features in its electronic structure frequencies around 2 ev are shown.