46 GHz bandwidth monolithic InP/InGaAs pin/SHBT photoreceiver

被引:0
|
作者
Swiss Federal Inst of Technology, Zurich , Zurich, Switzerland [1 ]
机构
来源
Electron Lett | / 1卷 / 40-41期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Monolithic PIN-HEMT photoreceiver integration
    Rondeau, G
    Biblemont, S
    Decobert, J
    Post, G
    2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, : 333 - 336
  • [22] MONOLITHIC INTEGRATION OF INGAAS-INP PIN PD WITH MISFET ON STEPLESS SUBSTRATE
    OHTSUKA, K
    SUGIMOTO, H
    ABE, Y
    MATSUI, T
    OGATA, H
    ELECTRONICS LETTERS, 1986, 22 (12) : 652 - 653
  • [24] W-band InGaAs/InP PIN diode monolithic integrated switches
    Alekseev, E
    Pavlidis, D
    Dickmann, J
    Hackbarth, T
    GAAS IC SYMPOSIUM - 18TH ANNUAL, TECHNICAL DIGEST 1996, 1996, : 285 - 288
  • [25] An InGaAs/InP HBT differential transimpeclance amplifier with 47 GHz bandwidth
    Weiner, JS
    Lee, JS
    Leven, A
    Baeyens, Y
    Houtsma, V
    Georgiou, G
    Yang, Y
    Frackoviak, J
    Tate, A
    Reyes, R
    Kopf, RF
    Sung, WJ
    Weimann, NG
    Chen, YK
    GAAS IC SYMPOSIUM - 25TH ANNUAL TECHNICAL DIGEST 2003, 2003, : 245 - 248
  • [26] Simple realization of a monolithic integrated photoreceiver for 10Gbit/s using an InP/InGaAs heterostructure
    Horstmann, M
    Hollfelder, M
    Schimpf, K
    Lehmann, R
    Marso, M
    Kordos, P
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 215 - 218
  • [27] 23 GHz monolithically integrated InP/InGaAs PIN/HBT-receiver with 12 THzΩ gain-bandwidth product
    Huber, D
    Bitter, M
    Romier, S
    Schnyder, I
    Bauknecht, R
    Morf, T
    Bergamaschi, C
    Jackel, H
    1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 447 - 450
  • [28] Design and process for self-aligned InP/InGaAs SHBT structure
    Li, X., 2005, Science Press (26):
  • [29] 4 GBIT/S PIN/HBT MONOLITHIC PHOTORECEIVER
    CHANDRASEKHAR, S
    DENTAI, AG
    JOYNER, CH
    JOHNSON, BC
    GNAUCK, AH
    QUA, GJ
    ELECTRONICS LETTERS, 1990, 26 (22) : 1880 - 1882
  • [30] High speed, monolithically integrated pin-HEMT photoreceiver fabricated on InP with a tunable bandwidth up to 22 GHz using a novel circuit design
    Klepser, BUH
    Spicher, J
    Bergamaschi, C
    Patrick, W
    Bachtold, W
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 443 - 446