X-ray emission induced by 60 keV high-flux copper negative-ion implantation

被引：0

作者：

Amekura, Hiroshi ^{[1
]}

Voitsenya, Vladimir ^{[2
]}

Lay, Thi Thi ^{[1
]}

Takeda, Yoshihiko ^{[1
]}

Kishimoto, Naoki ^{[1
]}

机构：

[1] National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

[2] Institute of Plasma Physics, NSC KIPT, 61108 Kharkov, Ukraine

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 2 B期

关键词：

Copper - Electromagnetic wave emission - Emission spectroscopy - Fused silica - Negative ions - Spectrum analysis;

D O I：

10.1143/jjap.40.1094

中图分类号：

学科分类号：

摘要：

X-ray emission induced by high-flux 60 keV Cu negative ion implantation into silica glasses (a-SiO2) has been studied in the energy range of 0.6-20 keV. At low ion fluxes, the emission spectrum consists of a strong Cu(L) line at 0.95 keV only, without Cu(K) and Si(K) lines. The result is explained by the electron promotion through the quasi-molecule formation. With increasing ion flux, new peaks appear at 1.8, 2.5 and 3.2 keV. These peaks are ascribed to the sum-peak effect under high-flux implantation. Judging from the cross sections and the time dependence, the observed Cu(L) X-ray is concluded to be generated via Cu-O collisions.

引用

页码：1094 / 1096