Study of n-channel enhancement mode InP MISFETS

被引：0

作者：

Jiang, Ruolian ^{[1
]}

Zheng, Youdou ^{[1
]}

Wang, Renkang ^{[1
]}

机构：

[1] Nanjing Univ, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1988年 / 9卷 / 05期

关键词：

Semiconducting Indium Compounds--Ion Implantation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

n-channel enhancement mode InP MISFETs based on InP/SiO2 interface are fabricated on Fe-doped S. I. InP 〈100〉 orientated with TEOS-PECVD SiO2 as the gate oxide. Source-drain regions are implanted with Si+ to create n+ layers. The effective electron channel mobiity and transconductance are 1400 cm2/V&middotS and 6.4 ms/mm respectively. The characteristics of the MISFETs and long-term drain current drift of the MISFETs are discussed.

引用

页码：451 / 458