GaN and AlGaN metal-semiconductor-metal photodetectors

被引:0
|
作者
Ferguson, I. [1 ]
Tran, C.A. [1 ]
Karlicek Jr., R.F. [1 ]
Feng, Z.C. [1 ]
Stall, R. [1 ]
Liang, S. [1 ]
Lu, Y. [1 ]
Joseph, C. [1 ]
机构
[1] EMCORE Corp, Somerset, United Kingdom
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:311 / 314
相关论文
共 50 条
  • [31] Enhanced Performance of Metal-Semiconductor-Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning
    Razeen, Ahmed S.
    Patil, Dharmaraj K.
    Jiang, Mengting
    Tang, Eric X.
    Yuan, Gao
    Ong, Jesper
    Wyen, Viet C.
    Radhakrishnan, K.
    Tripathy, Sudhiranjan
    ADVANCED MATERIALS INTERFACES, 2024, 11 (09)
  • [32] GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals
    Su, YK
    Chiou, YZ
    Juang, FS
    Chang, SJ
    Sheu, JK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (4B): : 2996 - 2999
  • [33] GaN Schottky barrier and metal-semiconductor-metal photodetectors with in situ SiNx nanonetwork
    Xie, J.
    Mateo, J.
    Ozgur, U.
    Morkoc, H.
    GALLIUM NITRIDE MATERIALS AND DEVICES III, 2008, 6894 : S8941 - S8941
  • [34] GaN metal-semiconductor-metal ultraviolet photodetectors with Ir/Pt contact electrodes
    Yu, C. L.
    Chen, C. H.
    Chang, S. J.
    Chang, P. C.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (02) : J71 - J72
  • [35] GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals
    Su, Yan-Kuin
    Chiou, Yu-Zung
    Juang, Fuh-Shyang
    Chang, Shoou-Jin
    Sheu, Jinn-Kung
    2001, Japan Society of Applied Physics (40):
  • [36] Current transport mechanisms in GaN-based metal-semiconductor-metal photodetectors
    Carrano, JC
    Li, T
    Grudowski, PA
    Eiting, CJ
    Dupuis, RD
    Campbell, JC
    APPLIED PHYSICS LETTERS, 1998, 72 (05) : 542 - 544
  • [37] SIMULATIONS FOR THE HIGH-SPEED RESPONSE OF GAN METAL-SEMICONDUCTOR-METAL PHOTODETECTORS
    JOSHI, RP
    DHARAMSI, AN
    MCADOO, J
    APPLIED PHYSICS LETTERS, 1994, 64 (26) : 3611 - 3613
  • [38] Effects of thermal annealing on the properties of GaN metal-semiconductor-metal UV photodetectors
    Zhao M.
    Zhao M.
    Fan X.
    Zhou M.
    Gu F.
    Zhang Y.
    Bao J.
    Zhongguo Jiguang/Chinese Journal of Lasers, 2010, 37 (03): : 822 - 825
  • [40] GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts
    Chang, SJ
    Lee, ML
    Sheu, JK
    Lai, WC
    Su, YK
    Chang, CS
    Kao, CJ
    Chi, GC
    Tsai, JA
    IEEE ELECTRON DEVICE LETTERS, 2003, 24 (04) : 212 - 214