GaN and AlGaN metal-semiconductor-metal photodetectors

被引：0
|
作者：
Ferguson, I. [1 ]
Tran, C.A. [1 ]
Karlicek Jr., R.F. [1 ]
Feng, Z.C. [1 ]
Stall, R. [1 ]
Liang, S. [1 ]
Lu, Y. [1 ]
Joseph, C. [1 ]
机构：
[1] EMCORE Corp, Somerset, United Kingdom
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1998年 / B50卷 / 1-3期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：311 / 314
相关论文
共 50 条
  • [1] GaN and AlGaN metal-semiconductor-metal photodetectors
    Ferguson, I
    Tran, CA
    Karlicek, RF
    Feng, ZC
    Stall, R
    Liang, S
    Lu, Y
    Joseph, C
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3): : 311 - 314
  • [2] Suppression of Dark Current on AlGaN/GaN Metal-Semiconductor-Metal Photodetectors
    Liu, Han-Yin
    Wang, Yi-Hsuan
    Hsu, Wei-Chou
    IEEE SENSORS JOURNAL, 2015, 15 (09) : 5202 - 5207
  • [3] Characterization of AlGaN/GaN Metal-Semiconductor-Metal Photodetectors With a Low-Temperature AlGaN Interlayer
    Lee, K. H.
    Chang, P. C.
    Chang, S. J.
    Wang, Y. C.
    Yu, C. L.
    Wu, S. L.
    IEEE SENSORS JOURNAL, 2009, 9 (5-6) : 723 - 727
  • [4] Metal-semiconductor-metal UV photodetectors fabricated on undoped AlGaN/GaN HEMMT structure
    Jiang, H
    Egawa, T
    Ishikawa, H
    Shao, C
    Jimbo, T
    PROCEEDINGS OF THE 2004 CHINA-JAPAN JOINT MEETING ON MICROWAVES, 2004, : 90 - 92
  • [5] Characteristics of metal-semiconductor-metal photodetectors based on GaN
    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
    Pan Tao Ti Hsueh Pao, 2007, SUPPL. (588-590):
  • [6] Simulation of AlGaN and BGaN metal-semiconductor-metal ultraviolet photodetectors
    Hamady, Sidi Ould Saad
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 1099 - 1104
  • [7] Degradation of AlGaN-based metal-semiconductor-metal photodetectors
    Brendel, M.
    Hagedorn, S.
    Brunner, F.
    Reiner, M.
    Zeimer, U.
    Weyers, M.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SC)
  • [8] GaN Metal-Semiconductor-Metal Photodetectors With SiN/GaN Nucleation Layer
    Su, Y. K.
    Chang, S. J.
    Jhou, Y. D.
    Wu, S. L.
    Liu, C. H.
    IEEE SENSORS JOURNAL, 2008, 8 (9-10) : 1693 - 1697
  • [9] Novel approaches for metal-semiconductor-metal GaN UV photodetectors
    Palacios, T
    Calle, F
    Monroy, E
    Omnès, F
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 194 (02): : 476 - 479
  • [10] GaN Metal-Semiconductor-Metal Photodetectors Prepared on Nanorod Template
    Chang, S. J.
    Wang, S. M.
    Chang, P. C.
    Kuo, C. H.
    Young, S. J.
    Chen, T. P.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 22 (09) : 625 - 627
12345