The fundamentals of overlay metrology

被引：0

作者：

Sullivan, N.T. ^{[1
]}

机构：

[1] Technology Development Group, Schlumberger ATE/VS, Concord, MA, United States

来源：

Semiconductor International | 2001年 / 24卷 / 10期

关键词：

Chemical mechanical polishing - Computer software - Mathematical models - Measurement errors - Measurement theory - Photolithography - Process control - Specifications - Substrates - Thin films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A study on the fundamentals of overlay metrology is performed. The overlay measurement equipment performance is found to be better than critical dimension (CD) metrology with respect to error budget allocations and relative stability of the overlay measurement target design. The combination of CD and overlay excursions are used for the determination of overlay requirements for device design. A variant of the box-in-box test structure is used for the measurement of overlay errors.

引用

页码：73 / 76