Confinement effects on be acceptors in GaAs/ AlGaAs multi quantum well structures

被引:0
|
作者
Reeder, A.A. [1 ]
McCombe, B.D. [1 ]
Chambers, F.A. [1 ]
Devane, G.P. [1 ]
机构
[1] SUNY Buffalo, United States
来源
| 1600年 / 04期
关键词
Beryllium Acceptors - Binding Energy - Confinement Effects - Quantum Wells;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] CONFINEMENT EFFECTS ON BE ACCEPTORS IN GAAS/ALGAAS MULTI QUANTUM WELL STRUCTURES
    REEDER, AA
    MCCOMBE, BD
    CHAMBERS, FA
    DEVANE, GP
    SUPERLATTICES AND MICROSTRUCTURES, 1988, 4 (03) : 381 - 383
  • [2] EFFECTS OF CONFINEMENT ON SHALLOW DONORS AND ACCEPTORS IN GAAS/ALGAAS QUANTUM WELLS
    REEDER, AA
    MERCY, JM
    MCCOMBE, BD
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) : 1690 - 1697
  • [3] Deactivation of Be acceptors by atomic hydrogen in AlGaAs/GaAs quantum well structures
    Zhao, QX
    Fimland, BO
    Sodervall, U
    Willander, M
    Selvig, E
    APPLIED PHYSICS LETTERS, 1997, 71 (15) : 2139 - 2141
  • [4] Hydrogen passivation of Be-acceptors in AlGaAs/GaAs quantum well structures
    Zhao, QX
    Sodervall, U
    Willander, M
    Fimland, BO
    Crawford, D
    Selvig, E
    Holtz, PO
    Karlsteen, M
    Sveinbjornsson, E
    HYDROGEN IN SEMICONDUCTORS AND METALS, 1998, 513 : 253 - 256
  • [5] Confinement effects on the electronic structure of shallow acceptors in GaAs/AlGaAs quantum wells
    Holtz, P.O.
    Zhao, Q.X.
    Monemar, B.
    Sundaram, M.
    Merz, J.L.
    Gossard, A.C.
    Materials Science Forum, 1994, 143-4 (pt 1) : 657 - 662
  • [6] Composition and confinement energies of interdiffused AlGaAs/GaAs single quantum well structures
    Hughes, PJ
    Weiss, BL
    Jackson, HE
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (07) : 808 - 812
  • [7] The confinement profile of as-grown movpe AlGaAs/GaAs quantum well structures
    Choy, WCH
    Hughes, PJ
    Weiss, BL
    INFRARED APPLICATIONS OF SEMICONDUCTORS - MATERIALS, PROCESSING AND DEVICES, 1997, 450 : 425 - 430
  • [8] A FAR INFRARED STUDY OF CONFINEMENT EFFECTS ON ACCEPTORS IN GAAS/ALGAAS QUANTUM-WELLS
    REEDER, AA
    MCCOMBE, BD
    CHAMBERS, FA
    DEVANE, GP
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (95): : 21 - 26
  • [9] A FAR INFRARED STUDY OF CONFINEMENT EFFECTS ON ACCEPTORS IN GAAS/ALGAAS QUANTUM-WELLS
    REEDER, AA
    MCCOMBE, BD
    CHAMBERS, FA
    DEVANE, GP
    SHALLOW IMPURITIES IN SEMICONDUCTORS 1988, 1989, 95 : 21 - 26
  • [10] DEEP LEVELS IN GAAS ALGAAS MULTI-QUANTUM-WELL STRUCTURES
    ARBAOUI, A
    TUCK, B
    PAULL, CJ
    HENINI, M
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1990, 1 (02) : 75 - 78