Low-acceptor-concentration GaInNAs grown by molecular-beam epitaxy for high-current p-i-n solar cell applications

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作者：
Ptak, A.J. [1 ]
Friedman, D.J. [1 ]
Kurtz, Sarah [1 ]
Reedy, R.C. [1 ]
机构：
[1] National Renewable Energy Laboratory, Golden, CO 80401, United States
来源：
Journal of Applied Physics | 2005年 / 98卷 / 09期
关键词：
Concentration (process) - Impurities - Molecular beam epitaxy - Photocurrents - Semiconductor growth - Solar cells - Temperature distribution;
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