Selective epitaxial growth of silicon carbide on patterned silicon substrates using hexachlorodisilane and propane

被引：0
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作者：
Jacob, Chacko [1 ]
Hong, Moon-Hi [2 ]
Chung, Juyong [2 ]
Pirouz, Pirouz [2 ]
Nishino, Shigehiro [1 ]
机构：
[1] Dept. of Electronics and Info. Sci., Kyoto Institute of Technology, Sakyo-ku, Kyoto, 606-8585, Japan
[2] Dept. of Mat. Sci. and Engineering, Case Western Reserve University, 10900 Euclid Ave., Cleveland, OH 44106, United States
来源：
Materials Science Forum | 2000年 / 338卷
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