Novel InGaAs/GaAs quantum dot structures formed in tetrahedral-shaped recesses on (111)B GaAs substrate using metallorganic vapor phase epitaxy

被引：0
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作者：
Sugiyama, Yoshihiro [1 ]
Sakuma, Yoshiki [1 ]
Muto, Shunichi [1 ]
Yokoyama, Naoki [1 ]
机构：
[1] Fujitsu Ltd, Atsugi, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 8 B期
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页码：4384 / 4386
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