Preparation and electronic properties of Schottky devices utilizing an asymmetrically substituted metal-free phthalocyanine Langmuir-Blodgett film as barrier layers

被引:0
|
作者
Liu, Y.Q. [1 ]
Xu, Y. [1 ]
Zhu, D.B. [1 ]
机构
[1] Acad Sinica, Beijing, China
来源
Synthetic Metals | 1995年 / 71卷 / 1 -3 pt 3期
基金
中国国家自然科学基金;
关键词
Cyanides - Electric conductivity - Electric properties - Electrodes - Electronic properties - Monolayers - Semiconducting aluminum compounds - Semiconducting films - Semiconductor devices;
D O I
暂无
中图分类号
学科分类号
摘要
Langmuir-Blodgett films of an asymmetrically substituted phthalocyanine, nitro-tri-t-butylphthalocyanine (NtBuPc) were fabricated with a Z-type deposition model. An Al/NtBuPc L-B film/ITO cell was prepared and its electronic properties were investigated. The cell showed a rectifying effect with a rectification ratio of 10 at ± 2.0 V. The ideality factors were 1.3 in the low voltage region and 3.1 in the high voltage region respectively. The origin of the rectifying properties for such a cell is discussed.
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页码:2249 / 2250
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