980 nm InGaAs/InGaAsP quantum well lasers with AlGaAs cladding grown by metal organic chemical vapour deposition

被引:0
|
作者
Chinese Acad of Sciences, Beijing, China [1 ]
机构
来源
Electron Lett | / 13卷 / 1312-1313期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] 980nm InGaAs/InGaAsP quantum well lasers with AlGaAs cladding grown by metal organic chemical vapour deposition
    Yang, GW
    Xu, ZT
    Ma, XY
    Xu, JY
    Zhang, JM
    Chen, LH
    ELECTRONICS LETTERS, 1998, 34 (13) : 1312 - 1313
  • [2] High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition
    Yang, GW
    Hwu, RJ
    Xu, ZT
    Ma, XY
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (10) : 1535 - 1541
  • [3] High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition
    Department of Electrical Engineering, University of Utah, Salt Lake City, UT 84112, United States
    不详
    IEEE J. Quantum Electron., 10 (1535-1541):
  • [4] High Power 980 nm InGaAs/AlGaAs Strained Quantum Well Lasers
    YIN Tao
    DU Jinyu
    LIAN Peng
    XU Zuntu
    CHEN Changhua
    GUO Weiling
    LIU Ying
    LI Shuang
    GAO Guo
    ZOU Deshu
    CHEN Jianxin
    SHEN Guangdi(Department of Electrical Engineering
    Chinese Journal of Lasers, 1999, (05) : 397 - 401
  • [5] High performance InGaAs InGaAsP strained quantum well lasers with AlGaAs cladding layers
    Xu, ZT
    Yang, GW
    Ma, XY
    Yin, T
    Lian, P
    Zhang, JM
    Xu, JY
    Chen, LH
    Shen, GD
    1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 625 - 628
  • [6] High performance InGaAs/InGaAsP strained quantum well lasers with AlGaAs cladding layers
    Xu, Zuntu
    Yang, Guowen
    Ma, Xiaoyu
    Yin, Tao
    Lian, Peng
    Zhang, Jingming
    Xu, Junying
    Chen, Lianghui
    Shen, Guangdi
    International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1998, : 625 - 628
  • [7] 980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergence
    Yen, ST
    Lin, G
    Liu, DC
    Tsai, CM
    Lee, CP
    15TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE - CONFERENCE DIGEST, 1996, : 13 - 14
  • [8] Carbon doped 980nm InGaAs strained quantum well lasers grown by metalorganic chemical-vapor deposition
    Yin, T
    Lian, P
    Xu, ZT
    Chen, CH
    Zhao, HD
    Zou, DS
    Chen, JX
    Gao, G
    Du, JY
    Tao, CB
    Shen, GD
    Lu, H
    Zheng, LX
    Chen, LH
    SEMICONDUCTOR LASERS III, 1998, 3547 : 48 - 53
  • [9] HIGH-POWER 980-NM ALGAAS INGAAS STRAINED QUANTUM-WELL LASERS GROWN BY OMVPE
    CHEN, YK
    WU, MC
    HOBSON, WS
    PEARTON, SJ
    SERGENT, AM
    CHIN, MA
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (05) : 406 - 408
  • [10] N-type modulation-doped strained InGaAs/AlGaAs quantum well lasers grown by metal organic chemical vapor deposition
    Tokyo Inst of Technology, Yokohama, Japan
    Conf Quant Electron Laser Sci QELS Tech Dig Ser, (184-185):