LOW TEMPERATURE PROCESS FOR FORMING SUPERCONDUCTING Nb3Si.

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作者：

Anon

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来源：

IBM technical disclosure bulletin | 1985年 / 28卷 / 06期

关键词：

ION BEAMS - Applications;

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摘要：

Ion beam mixing of Nb films (300 A) deposited on SiO//2 can be used to produce a layer of the compound Nb//3Si. The ions are 200 kev Xe** plus , at a dose of 1 multiplied by 10**1**6 ions/cm**2. The Nb//3Si was shown to be stoichiometric by backscattering, and the phase was identified by X-ray and electron diffraction. Implantation (mixing) can be done at room temperature at 200 degree C and at 400 degree C, with the same compound produced in each case. The success of this method for producing Nb//3Si lies in the combination of ion beam mixing and the metal/SiO//2 system.

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