PHYSICAL AND CHEMICAL NATURE OF FILMS FORMED ON Si(100) SURFACES SUBJECTED TO C2H4 AT ELEVATED TEMPERATURES.

被引：0

作者：

Kim, H.J. ^{[1
]}

Davis, R.F. ^{[1
]}

Cox, X.B. ^{[1
]}

Linton, R.W. ^{[1
]}

机构：

[1] North Carolina State Univ, Raleigh,, NC, USA, North Carolina State Univ, Raleigh, NC, USA

来源：

Journal of the Electrochemical Society | 1987年 / l34卷 / 09期

关键词：

HYDROCARBONS - Applications - SEMICONDUCTING SILICON - Surfaces;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The heteroepitaxial growth of contiguous monocrystalline beta -SiC films is facilitated by the initial and separate chemical conversion of the Si(100) surface via reaction at elevated temperatures with a hydrocarbon gas entrained in H//2. The initial and subsequent reactions produce a very thin film of beta -SiC. Sealing of the initial growth defects and continued pyrolysis of the hydrocarbon combine to both limit the thickness of this film and result in the formation of free C on the final SiC surface. Reflection (high energy) electron diffraction and optical, scanning, and cross-sectional transmission electron microscopies revealed the beta -SiC films to be generally monocrystalline but containing regions of disorder as well as pyramidal-shaped pits, mismatch dislocations, stacking faults, and residual strain.

引用

页码：2269 / 2275