Energetics of extrinsic defects in Si and their role in nonequilibrium dopant diffusion

被引：0

作者：

Cristiano, F. ^{[1
]}

Colombeau, B. ^{[1
]}

Claverie, A. ^{[1
]}

机构：

[1] CEMES/CNRS, BP 4347, 31055 Toulouse Cedex 4, France

来源：

Diffusion and Defect Data. Pt A Defect and Diffusion Forum | 2000年 / 183卷

关键词：

Crystal orientation - Diffusion in solids - Dislocations (crystals) - Ion implantation - Semiconductor doping - Silicon wafers - Transmission electron microscopy;

D O I：

10.4028/www.scientific.net/ddf.183-185.199

中图分类号：

学科分类号：

摘要：

In this paper, we discuss the mechanisms by which small clusters evolve through `magic' sizes into {113} defects and then, at sufficiently high dose levels, transform into dislocation loops of two types. This ripening process is mediated by the interchange of free Si(int)s between different extended defects, leading to a decrease of their formation energy. A detailed analysis of extrinsic defect energetics has been carried out and it is shown that Ostwald ripening is the key concept for understanding and simulating extrinsic defect kinetics and thus predict TED evolution.

引用

页码：199 / 206