Emission characteristics of amorphous silicon field emitter arrays sealed in a vacuum package

被引：0

作者：

Gamo, Hidenori ^{[2
]}

Kai, Teruhiko ^{[2
]}

Kanemaru, Seigo ^{[1
]}

Itoh, Junji ^{[1
]}

机构：

[1] Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan

[2] Technical Research Institute, Toppan Printing Co., Ltd., 4-2-3 Takanodai-minami, Sugito, Saitama 345-8508, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 12 B期

关键词：

Experimental; (EXP);

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Emission characteristics of amorphous silicon field emitter arrays (a-Si FEAs) in a vacuum package sealed with TO-5 have been measured and evaluated. The TO-5 header mounted with a FEA, was inserted through a hole in a glass plate and was hermetically sealed to the glass plate using epoxy resin as a sealant. In the same a-Si FEA device, lower emission currents have been observed in the vacuum package, as compared with those measured in an ultra-high vacuum (UHV) chamber. On the other hand, an a-Si FEA monolithically integrated with a thin-film transistor (TFT) has exhibited almost the same emission characteristics both in the vacuum package and in the UHV chamber at the region of saturated emission currents due to the TFT function. A highly stable emission current of approximately 0.1 μA and with fluctuations of less than 2% has been achieved in the vacuum package at the TFT gate and the extraction voltages of 14 V and 150 V, respectively.

引用

页码：7213 / 7216