Epitaxial growth of single-crystal ultrathin films of bismuth on Si(111)

被引：0

作者：

Nagao, Tadaaki ^{[1
,2
]}

Doi, Takumi ^{[1
]}

Sekiguchi, Takeharu ^{[1
]}

Hasegawa, Shuji ^{[1
,2
]}

机构：

[1] Department of Physics, Graduate School of Science, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan

[2] Core Res. Evolutional Sci. Technol., Japan Sci. and Technol. Corporation, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 7 B期

关键词：

Crystal defects - Crystal orientation - Epitaxial growth - Nanostructured materials - Reflection high energy electron diffraction - Scanning tunneling microscopy - Semiconducting bismuth compounds - Semiconducting silicon - Semiconductor growth - Single crystals - Ultrathin films - Wetting;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have studied the epitaxial growth of bismuth overlayers on Si(111) surfaces by in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Lateral growth of texture two-dimensional (2D) nanocrystals takes place after the formation of an initial disordered wetting layer on the 7×7 DAS structure. After the coalescence of the texture 2D nanocrystals, alignment in their azimuthal orientation takes place. At slightly more than 15 monolayers, the growth front of the overlayer exhibits a perfectly long-range ordered Bi(0001)-1×1 surface. The films prepared on Si(111)-α-√3×√3-Bi or on Si(111)-β-√3×√3-Bi do not show as good quality as those on Si(111)-7×7. Thus, the initial disordered wetting layer formed on the 7×7 surface successfully accommodates the large 18% lattice mismatch between the Si(111) and Bi(0001) planes and allows the 2D nanocrystal to grow laterally.

引用

页码：4567 / 4570