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Etch pit development and growth on GaAs(110)
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Physical Review B: Condensed Matter
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A NEW TECHNIQUE FOR WHOLE-WAFER ETCH-PIT DENSITY MAPPING IN GAAS
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[23]
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机构:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa-ku, Nagoya 466, Gokiso-cho
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论文数:
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引用数:
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机构:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa-ku, Nagoya 466, Gokiso-cho
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论文数:
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引用数:
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机构:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa-ku, Nagoya 466, Gokiso-cho
UMENO, M
APPLIED PHYSICS LETTERS,
1990,
56
(15)
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-
1435
[30]
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TOYAMA, N
论文数:
0
引用数:
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h-index:
0
TOYAMA, N
YOSHIDA, S
论文数:
0
引用数:
0
h-index:
0
YOSHIDA, S
JAPANESE JOURNAL OF APPLIED PHYSICS,
1978,
17
(01)
: 233
-
234
←
1
2
3
4
5
→