GATE BURNOUT IN MESFET DEVICES.

被引：0
|
作者：
Trivedi, P.L. [1 ]
Sharma, G.P. [1 ]
Purohit, R.K. [1 ]
机构：
[1] Solid State Physics Lab, Delhi, India, Solid State Physics Lab, Delhi, India
来源：
Indian Journal of Pure and Applied Physics | 1986年 / 24卷 / 01期
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D O I：
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摘要：
7
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页码：45 / 46
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