GATE BURNOUT IN MESFET DEVICES.

被引：0

作者：

Trivedi, P.L. ^{[1
]}

Sharma, G.P. ^{[1
]}

Purohit, R.K. ^{[1
]}

机构：

[1] Solid State Physics Lab, Delhi, India, Solid State Physics Lab, Delhi, India

来源：

Indian Journal of Pure and Applied Physics | 1986年 / 24卷 / 01期

关键词：

D O I：

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摘要：

引用

页码：45 / 46

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