共 50 条
- [45] Surface morphology and carbon incorporation for hexagonal GaN/(111)B GaAs metalorganic vapor phase epitaxy using dimethylhydrazine and trimethylgallium JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (5A): : 2592 - 2595
- [48] INAS EPITAXIAL NANOCRYSTAL GROWTH ON SE-TERMINATED GAAS(001) COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 143 - 148