Surface morphology of S or Se terminated GaAs(111)B

被引：0
|
作者：
Univ of Tokyo, Tokyo, Japan [1 ]
机构：
来源：
Appl Surf Sci | / 453-456期
关键词：
The present work is supportedb y a Grant-in-aid for Scientific Research from the Ministry of Education; Science; Sports and Culture;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
8
引用
收藏
相关论文
共 50 条
  • [1] Surface morphology of S or Se terminated GaAs(111)B
    Nishikawa, H
    Saiki, K
    Koma, A
    APPLIED SURFACE SCIENCE, 1997, 113 : 453 - 456
  • [2] Double chain structures on the Sb-terminated GaAs(111)B surface
    Moriarty, P.
    Beton, P. H.
    Woolf, D. A.
    Pigment and Resin Technology, 1995, 24 (12):
  • [3] A STUDY ON THE RECONSTRUCTION OF GA TERMINATED GAAS [111] SURFACE
    TEKMAN, E
    GULSEREN, O
    ORMECI, A
    CIRACI, S
    SOLID STATE COMMUNICATIONS, 1985, 56 (06) : 501 - 504
  • [4] Island, trimer, and chain formation on the Sb-terminated GaAs(111)B surface
    Moriarty, P
    Beton, PH
    Henini, M
    Woolf, DA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (02): : 1024 - 1028
  • [5] Epitaxial growth of TiSe2 thin films on Se-terminated GaAs(111)B
    Nishikawa, H
    Shimada, T
    Koma, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (05): : 2893 - 2896
  • [6] Surface, interface and bulk properties of GaAs(111)B treated by Se layers
    Feng, PX
    Riley, JD
    Leckey, RCG
    Pigram, PJ
    Seyller, T
    Ley, L
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 34 (05) : 678 - 682
  • [7] Surface morphology of GaSb grown on (111)B GaAs by molecular beam epitaxy
    Hall, E
    Kroemer, H
    JOURNAL OF CRYSTAL GROWTH, 1999, 203 (03) : 297 - 301
  • [8] Surface morphology of MnAs overlayers grown by MBE on GaAs(111)B substrates
    Sadowski, J
    Kanski, J
    Ilver, L
    Johansson, J
    APPLIED SURFACE SCIENCE, 2000, 166 (1-4) : 247 - 252
  • [9] Atomic structure and passivated nature of the Se-treated GaAs(111) B surface
    Ohtake, Akihiro
    Goto, Shunji
    Nakamura, Jun
    SCIENTIFIC REPORTS, 2018, 8
  • [10] Atomic structure and passivated nature of the Se-treated GaAs(111)B surface
    Akihiro Ohtake
    Shunji Goto
    Jun Nakamura
    Scientific Reports, 8
12345