Preparation of nitrogen containing carbon films using chemical vapor deposition enhanced by electron cyclotron resonance plasma

被引：0
|
作者：
机构：
来源：
Appl Phys Lett | / 3卷 / 353期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition
    Lapeyrade, M
    Besland, MP
    Meva'a, C
    Sibaï, A
    Hollinger, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (02): : 433 - 444
  • [22] SILICON DIOXIDE FILMS DEPOSITED BY ELECTRON-CYCLOTRON RESONANCE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
    ANDOSCA, RG
    VARHUE, WJ
    ADAMS, E
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (03) : 1126 - 1132
  • [23] Substrate effects on the epitaxial growth of AlN thin films using electron cyclotron resonance plasma enhanced chemical vapor deposition
    Soh, JW
    Kim, JH
    Lee, WJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (11B): : L1518 - L1520
  • [24] Electron cyclotron resonance assisted chemical vapor deposition of carbon nitride films on diamond
    Wu, KH
    Wang, EG
    Qing, J
    Xu, GC
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (03) : 1702 - 1704
  • [25] Electron cyclotron resonance assisted chemical vapor deposition of carbon nitride films on diamond
    J Appl Phys, 3 (1702):
  • [26] Effects of process parameters on the structure of hydrogenated amorphous carbon films processed by electron cyclotron resonance plasma enhanced chemical vapor deposition
    Xie, Dong
    Liu, Hengjun
    Deng, Xingrui
    Leng, Y. X.
    Huang, Nan
    SURFACE & COATINGS TECHNOLOGY, 2010, 204 (18-19): : 3029 - 3033
  • [27] Effect of hydrogen flow on the properties of hydrogenated amorphous carbon films fabricated by electron cyclotron resonance plasma enhanced chemical vapor deposition
    Deng, X. R.
    Leng, Y. X.
    Dong, X.
    Sun, H.
    Huang, Nan
    SURFACE & COATINGS TECHNOLOGY, 2011, 206 (05): : 1007 - 1010
  • [28] Low temperature deposition of silicon nitride films by distributed electron cyclotron resonance plasma-enhanced chemical vapor deposition
    J Vac Sci Technol A, 6 (2900):
  • [29] A comparative study on the properties of TiN films prepared by chemical vapor deposition enhanced by rf plasma and by electron cyclotron resonance plasma
    Kim, JS
    Jun, BH
    Lee, EJ
    Hwang, CY
    Lee, WJ
    THIN SOLID FILMS, 1997, 292 (1-2) : 124 - 129
  • [30] ELECTRON-CYCLOTRON RESONANCE PLASMA STREAM SOURCE FOR PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
    POPOV, OA
    WALDRON, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 914 - 917
12345