Fabrication of SiO2/Si/SiO2 double barrier diodes using two-dimensional Si structures

被引：0

作者：

Namatsu, Hideo ^{[1
]}

Horiguchi, Seiji ^{[1
]}

Takahashi, Yasuo ^{[1
]}

Nagase, Masao ^{[1
]}

Kurihara, Kenji ^{[1
]}

机构：

[1] NTT Basic Research Lab, Kanagawa, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1997年 / 36卷 / 6 A期

关键词：

D O I：

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学科分类号：

摘要：

引用

页码：3669 / 3674

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