Low noise ρ-π-n GaN ultraviolet photodetectors

被引：0
|
作者：
机构：
来源：
Appl Phys Lett | / 16卷 / 2334期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Analysis of external quantum efficiencies of GaN homojunction p-i-n ultraviolet photodetectors
    Li, T
    Carrano, JC
    Campbell, JC
    Schurman, M
    Ferguson, I
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (08) : 1203 - 1206
  • [32] High-performance GaN p-n junction photodetectors for solar ultraviolet applications
    Monroy, E
    Munoz, E
    Sanchez, FJ
    Calle, F
    Calleja, E
    Beaumont, B
    Gibart, P
    Munoz, JA
    Cusso, F
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (09) : 1042 - 1046
  • [33] Low-frequency noise in n-GaN
    N. V. D’yakonova
    M. E. Levinshtein
    S. Contreras
    W. Knap
    B. Beaumont
    P. Gibart
    Semiconductors, 1998, 32 : 257 - 260
  • [34] Low-frequency noise in n-GaN
    D'Yakonova, NV
    Levinshtein, ME
    Contreras, S
    Knap, W
    Beaumont, B
    Gibart, P
    SEMICONDUCTORS, 1998, 32 (03) : 257 - 260
  • [35] Effect of p-GaN layer doping on the photoresponse of GaN-based p-i-n ultraviolet photodetectors
    Wang, Jun
    Guo, Jin
    Xie, Feng
    Wang, Wanjun
    Wang, Guosheng
    Wu, Haoran
    Wang, Tanglin
    Song, Man
    2015 INTERNATIONAL CONFERENCE ON OPTICAL INSTRUMENTS AND TECHNOLOGY: OPTICAL SENSORS AND APPLICATIONS, 2015, 9620
  • [36] Schottky barrier ultraviolet photodetectors on epitaxial lateral overgrown GaN
    Depto. de Ing. Electrónica, ETSI Telecomunicación, Univ. Politécnica de Madrid, E-28040 Madrid, Spain
    不详
    Phys Status Solidi A, 1 (141-145):
  • [37] An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors
    Zhao De-Gang
    Jiang De-Sheng
    Liu Zong-Shun
    Zhu Jian-Jun
    Wang Hui
    Zhang Shu-Ming
    Yang Hui
    CHINESE PHYSICS LETTERS, 2009, 26 (05)
  • [38] Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors
    Zhou, JJ
    Jiang, RL
    Sha, J
    Liu, J
    Shen, B
    Zhang, R
    Zheng, YD
    CHINESE PHYSICS, 2003, 12 (07): : 785 - 788
  • [39] Very high-speed ultraviolet photodetectors fabricated on GaN
    J. C. Carrano
    T. Li
    C. J. Eiting
    R. D. Dupuis
    J. C. Campbell
    Journal of Electronic Materials, 1999, 28 : 325 - 333
  • [40] GaN ultraviolet photodetectors with transparent titanium tungsten and tungsten electrodes
    Chiou, YZ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (08) : G639 - G642
12345