Low noise ρ-π-n GaN ultraviolet photodetectors

被引:0
|
作者
机构
来源
Appl Phys Lett | / 16卷 / 2334期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Graphene/GaN diodes for ultraviolet and visible photodetectors
    Lin, Fang
    Chen, Shao-Wen
    Meng, Jie
    Tse, Geoffrey
    Fu, Xue-Wen
    Xu, Fu-Jun
    Shen, Bo
    Liao, Zhi-Min
    Yu, Da-Peng
    APPLIED PHYSICS LETTERS, 2014, 105 (07)
  • [22] Ultrahigh Gain, Low Noise, Ultraviolet Photodetectors with Highly Aligned Organic Crystals
    Yuan, Yongbo
    Huang, Jinsong
    ADVANCED OPTICAL MATERIALS, 2016, 4 (02): : 264 - 270
  • [23] Low-Frequency Noise Characteristics of In-Doped ZnO Ultraviolet Photodetectors
    Chang, Shoou-Jinn
    Duan, Bi-Gui
    Hsiao, Chih-Hung
    Young, Sheng-Joue
    Wang, Bo-Chin
    Kao, Tsung-Hsien
    Tsai, Kai-Shiang
    Wu, San-Lein
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 25 (21) : 2043 - 2046
  • [24] Influence of defects in n--GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors
    Zhao, D. G.
    Jiang, D. S.
    Zhu, J. J.
    Liu, Z. S.
    Zhang, S. M.
    Liang, J. W.
    Yang, Hui
    Li, X.
    Li, X. Y.
    Gong, H. M.
    APPLIED PHYSICS LETTERS, 2007, 90 (06)
  • [25] VISIBLE-BLIND ULTRAVIOLET PHOTODETECTORS BASED ON GAN P-N-JUNCTIONS
    CHEN, Q
    KHAN, MA
    SUN, CJ
    YANG, JW
    ELECTRONICS LETTERS, 1995, 31 (20) : 1781 - 1782
  • [26] High Responsivity and Low Dark Current Ultraviolet Photodetectors Using p-GaN/AlGaN/GaN Heterostructure
    Lyu, Qifeng
    Jiang, Huaxing
    Lu, Xing
    Lau, Kei May
    2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
  • [27] Ultrahigh Sensitivity Graphene/Nanoporous GaN Ultraviolet Photodetectors
    Li, Jing
    Xi, Xin
    Lin, Shan
    Ma, Zhanhong
    Li, Xiaodong
    Zhao, Lixia
    ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (10) : 11965 - 11971
  • [28] Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors
    Zhou Mei
    Zhao De-Gang
    ACTA PHYSICA SINICA, 2008, 57 (07) : 4570 - 4574
  • [29] Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors
    Zhou, Mei
    Zhao, De-Gang
    Wuli Xuebao/Acta Physica Sinica, 2008, 57 (07): : 4570 - 4574
  • [30] High-performance GaN p-n junction photodetectors for solar ultraviolet applications
    Universidad Politecnica de Madrid, Madrid, Spain
    Semicond Sci Technol, 9 (1042-1046):