High energy implantation masking with polyimide

被引：0

作者：

Mutikainen, Risto H. ^{[1
]}

Wong, Hing ^{[1
]}

Cheung, Nathan W. ^{[1
]}

机构：

[1] Univ of California, United States

来源：

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1989年 / B37-38卷 / 1-2期

关键词：

Integrated Circuits - Masks - Phosphorus - Polyimides;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A negative working polyimide resist has been studied as high energy implantation masking material (Ciba-Geigy RD86-710). To determine the blocking characteristics in the MeV ion energy range, a new method based on polyimide beveling was developed. Nonlinear blocking phenomena due to polyimide shrinkage were observed. Experimental blocking characteristics for the polyimide photoresist is presented for phosphorus ion energies in the MeV range.

引用

页码：716 / 719