共 50 条
- [42] CHARACTERISTICS OF SI DOPED GAAS GROWN ON (111)A, B AND (100) SUBSTRATES BY MBE IN RELATION TO LATTICE LOCATION OF SI INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 57 - 60
- [43] Reduction of defects in GaP layers grown on Si(100) by MOCVD 2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2021, : 1344 - 1347
- [45] CHARACTERISTICS OF SI DOPED GAAS GROWN ON (111)A, B AND (100) SUBSTRATES BY MBE IN RELATION TO LATTICE LOCATION OF SI GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 57 - 60
- [48] GaAs solar cells grown on GaP CONFERENCE RECORD OF THE TWENTY FIFTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1996, 1996, : 61 - 64